Title :
Scaling of high aspect ratio current limiters for the individual ballasting of large arrays of field emitters
Author :
Guerrera, Stephen A. ; Velásquez-García, Luis F. ; Akinwande, Akintunde I.
Author_Institution :
Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
We report the fabrication and characterization of deep submicron high-aspect-ratio current limiters for ballasting individual field emitters within field emitter arrays. These vertical ungated field-effect transistors (FETs) show current-source like behavior, with saturation currents up to 15 pA / FET.
Keywords :
current limiters; field effect transistors; field emitter arrays; FET; field emitter arrays; field-effect transistors; high aspect ratio current limiters; individual ballasting; large arrays; Contact resistance; Electronic ballasts; FETs; Fabrication; Field emitter arrays; Logic gates; Silicon; Ballasting; Si field emission arrays (FEAs); cathodes; electron supply control; vertical ungated Si field-effect transistors (FETs);
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2011 24th International
Conference_Location :
Wuppertal
Print_ISBN :
978-1-4577-1243-2
Electronic_ISBN :
pending
