Title :
Aperture size dependent collimation in double gate field emitter arrays
Author :
Helfenstein, P. ; Kirk, E. ; Jefimovs, K. ; Escher, C. ; Fink, H.-W. ; Tsujino, S.
Author_Institution :
Lab. for Micro- & Nanotechnol., Paul Scherrer Inst., Villigen, Switzerland
Abstract :
We studied electron beam collimation in field emitter arrays having electron extraction gate and collimation gate electrodes with the goal to develop a high-brightness, high current cathode. Using molybdenum field emitter arrays prepared by molding, we fabricated stacked double-gate devices by a process utilizing focused-ion beam milling. The influence of collimation electrode thicknesses and gate aperture diameters on the electron beam collimation characteristics was then investigated systematically by experiments.
Keywords :
electron beams; electron emission; field emitter arrays; focused ion beam technology; molybdenum; aperture size dependent collimation; collimation electrode thickness; collimation gate electrode; double gate field emitter array; electron beam collimation; electron extraction gate; focused-ion beam milling; gate aperture diameter; high current cathode; molding; molybdenum field emitter array; stacked double-gate device; Apertures; Current density; Electrodes; Electron beams; Field emitter arrays; Logic gates; double-gate field emitter array; electron beam collimation; electron optics; field electron emission; field emitter array; focused ion beam; molding method;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2011 24th International
Conference_Location :
Wuppertal
Print_ISBN :
978-1-4577-1243-2
Electronic_ISBN :
pending
