Title : 
Simulation of electron trajectories of a field emission electron source in triode configuration by using finite element methods
         
        
            Author : 
Prommesberger, C. ; Dams, F. ; Langer, C. ; Schreiner, R. ; Rutkowski, S. ; Bornmann, B. ; Mueller, G.
         
        
            Author_Institution : 
Fac. of Microsyst. Technol., Univ. of Appl. Sci. Regensburg, Regensburg, Germany
         
        
        
        
        
        
            Abstract : 
The finite element simulation program COMSOL Multiphysics® was used to simulate the emission efficiency of a silicon tip electron source in triode configuration for different geometries and electrode potentials. The simulation predicts a maximum emission efficiency of 84% for an optimized structure. In a second simulation a gate electrode was concentrically arranged above a single CNT column. Here, the efficiency was simulated as a function of gate hole geometry, electrode potentials and distances between the electrodes. The simulation shows that a conical shape of the gate hole results in an efficiency up to nearly 100%.
         
        
            Keywords : 
carbon nanotubes; electron field emission; finite element analysis; triodes; CNT column; COMSOL Multiphysics; electrode potentials; electron trajectory simulation; emission efficiency simulation; field emission electron source; finite element simulation program; gate electrode; gate hole geometry; silicon tip electron source; triode configuration; Anodes; Cathodes; Electric potential; Electron sources; Logic gates; Silicon; electron source simulation; simulation of electron trajectories;
         
        
        
        
            Conference_Titel : 
Vacuum Nanoelectronics Conference (IVNC), 2011 24th International
         
        
            Conference_Location : 
Wuppertal
         
        
        
            Print_ISBN : 
978-1-4577-1243-2
         
        
            Electronic_ISBN : 
pending