DocumentCode :
55164
Title :
Resistive Switching in Ferromagnetic {\\rm La}_{2/3}{\\rm Ca}_{1/3}{\\rm MnO}_{3} Thin Films
Author :
Alposta, I. ; Kalstein, A. ; Ghenzi, N. ; Bengio, S. ; Zampieri, G. ; Rubi, D. ; Levy, P.
Author_Institution :
Centro Atomico Constituyentes (CNEA), Buenos Aires, Argentina
Volume :
49
Issue :
8
fYear :
2013
fDate :
Aug. 2013
Firstpage :
4582
Lastpage :
4585
Abstract :
Ferromagnetic thin films of La2/3Ca1/3MnO3 manganite were grown by pulsed laser deposition, under different oxygen atmospheres, on silicon substrates. We performed structural, magnetic, spectroscopic, and electrical characterization of the films. Resistive switching between high and low resistance states was obtained upon pulsing with opposite polarities voltages. The I-V curves exhibit sharp transitions between these states. The RS properties are strongly dependant on the films oxygen stochiometry and on the compliance current used for producing the high to low transition. ON/OFF ratios as high as 1000 were obtained for optimal RS conditions. Obtained results are discussed within the framework of mobile oxygen vacancies.
Keywords :
X-ray photoelectron spectra; calcium compounds; ferromagnetic materials; lanthanum compounds; magnetic thin films; pulsed laser deposition; stoichiometry; vacancies (crystal); I-V curves; LaCaMnO3; ON-OFF ratios; Si; compliance current; electrical properties; ferromagnetic thin films; magnetic properties; manganite; oxygen stochiometry; oxygen vacancies; polarities; pulsed laser deposition; resistance states; resistive switching; spectroscopic properties; structural properties; Electrodes; Magnetic hysteresis; Resistance; Saturation magnetization; Scanning electron microscopy; Switches; Temperature measurement; Ferromagnetism; RRAM memories; manganites; thin films;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2013.2258662
Filename :
6566117
Link To Document :
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