Title :
Research on the peculiar flashover phenomenon of the PCSS in SF6
Author :
Shi, Wei ; Jiang, Zenggong ; Fu, Zhanglong ; Wang, Mingqiang
Author_Institution :
Appl. Phys. Dept., Xi´´an Univ. of Technol., Xi´´an, China
Abstract :
Flashover severely restricts the development of the photoconductive semiconductor switch (PCSS) in high-voltage and high power. This paper reported the peculiar phenomenon that the current pulse, when the flashover occurred, was lower and wider than the normal value. Based on the photon-activated charge domain model and semiconductor flashover mechanism, the reason, the influence of secondary electron emission avalanche on the output wave, was analyzed. The dipole domain was imported to describe the critical state where the lower and wider current pulse occurred during the flashover.
Keywords :
electron emission; flashover; photoconducting switches; PCSS; SF6; dipole domain; peculiar flashover phenomenon; photoconductive semiconductor switch; photon-activated charge domain model; secondary electron emission avalanche; semiconductor flashover mechanism; Electrodes; Flashover; Gallium arsenide; Photonics; Switches; PCSS; flashover; photon-activated charge domain; secondary electron emission avalanche; semi-insulating GaAs;
Conference_Titel :
Electronics and Optoelectronics (ICEOE), 2011 International Conference on
Conference_Location :
Dalian
Print_ISBN :
978-1-61284-275-2
DOI :
10.1109/ICEOE.2011.6013189