Title :
The controllability of the non-ohmic and dielectric properties of the zno- based ceramic by doping with Ag
Author :
Pu, Lichun ; Zhang, Feng ; Meng, Fancheng ; Feng, Wenlin
Author_Institution :
Sch. of Optoelectron. Inf., Chongqing Univ. of Technol., Chongqing, China
Abstract :
The ZnO-based ceramic samples containing Ag were prepared using the conventional solid-state reaction method. The experimental results showed that the non-ohmic and dielectric properties of the ZnO-based ceramic could be regularly changed by doping with Ag when the Ag percentages were more than 5.2% in volume. With the increase of the Ag fractions in the ceramic matrixes, the nonlinear voltage of the samples obviously decrease with a light decay of the nonlinear coefficient while the dielectric constants greatly increase with almost the same dissipation factors at 20Hz~1MHz. This demonstrates a fact that the electrical and dielectric behaviors of the ZnO-based ceramics can be improved by optimizing the content of Ag in the ceramic matrix.
Keywords :
II-VI semiconductors; ceramics; permittivity; semiconductor doping; silver; sintering; wide band gap semiconductors; zinc compounds; ZnO:Ag; ceramic matrix; conventional solid-state reaction method; dielectric constants; dielectric properties; electrical properties; frequency 20 Hz to 1 MHz; nonOhmic properties; nonlinear coefficient; sintering; Ceramics; Dielectrics; Doping; Impedance; Matrix decomposition; Voltage control; Zinc oxide; Ag; Dielectric property; Non-Ohmic property; ZnO ceramic;
Conference_Titel :
Electronics and Optoelectronics (ICEOE), 2011 International Conference on
Conference_Location :
Dalian
Print_ISBN :
978-1-61284-275-2
DOI :
10.1109/ICEOE.2011.6013201