The output of photovoltaic detector irradiated by spectral unrelated laser

The composition of open-circuit voltage of photovoltaic detector under irradiation of spectral unrelated laser is analyzed. The structure of detector, the energy band of PN junction, temperature gradient in the detector and the movement of carriers are investigated to explain the mechanism of thermovoltage. For illumination, the detector whose irradiation surface is n-type or p-type semiconductor is taken as an example to make an analysis of the composition of open-circuit voltage. Results show that, the open-circuit voltage of photovoltaic detector under irradiation of spectral unrelated laser is decided by thermovoltage and temperature difference-EMF (Electric Motive Force). Moreover, the voltage directions of them are opposite no matter what region (p or n) is taken as irradiation surface.