Transistor Model Building for a Microwave Power Heterojunction Bipolar Transistor

Author

Hai-Feng Wu ; Qian-Fu Cheng ; Shu-Xia Yan ; Qi-Jun Zhang ; Jian-Guo Ma

Author_Institution

Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China

Volume

16

Issue

2

fYear

2015

fDate

Mar-15

Firstpage

85

Lastpage

92

Abstract

This article describes the detailed development of a large-signal transistor model for a microwave power heterojunction bipolar transistor (HBT). Based on the neurospace-mapping (Neuro-SM) technique, this model uses neural networks to map a coarse model space represented by the existing model simulations onto the fine model space represented by device measurements. This article tied for first place in the Microwave Transistor Modeling Student Design Competition at the 2014 IEEE International Microwave Symposium (IMS2014) held in Tampa, Florida.

Keywords

electronic engineering computing; heterojunction bipolar transistors; microwave bipolar transistors; neural nets; power bipolar transistors; semiconductor device models; HBT; coarse model space; device measurements; large-signal transistor model; microwave power heterojunction bipolar transistor; model simulations; neural networks; neuro-SM technique; neurospace-mapping technique; Bipolar transistors; Computational modeling; Data models; Equivalent circuits; Heterojunction bipolar transistors; Integrated circuit modeling; Mathematical model; Microwave devices; Solid modeling; Transistors;

fLanguage

English

Journal_Title

Microwave Magazine, IEEE

Publisher

ieee

ISSN

1527-3342

Type

jour

DOI

10.1109/MMM.2014.2377588

Filename

7032047