DocumentCode
552058
Title
Frequency response of amorphous silicon photoconductors
Author
Otosaka, Hideyuki ; Ebuchi, Shingo ; Maruyama, Takeo ; Iiyama, Koichi ; Ohdaira, Keisuke ; Matsumura, Hideki
Author_Institution
Kanazawa Univ., Ishikawa, Japan
fYear
2011
fDate
4-8 July 2011
Firstpage
295
Lastpage
296
Abstract
We fabricated an amorphous silicon photoconductor and measured a sensitivity and frequency response at a wavelength of 650 nm. The maximum sensitivity of 4.6m A/W and the maximum bandwidth of 10 MHz were obtained at the bias voltage of 10 V.
Keywords
amorphous semiconductors; elemental semiconductors; frequency response; integrated optics; optical fabrication; photoconducting materials; photodetectors; silicon; Si; amorphous silicon photoconductors; bias voltage; frequency response; sensitivity measurement; voltage 10 V; wavelength 650 nm; Bandwidth; Frequency measurement; Frequency response; Photoconducting materials; Photoconductivity; Sensitivity; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Opto-Electronics and Communications Conference (OECC), 2011 16th
Conference_Location
Kaohsiung
Print_ISBN
978-1-61284-288-2
Electronic_ISBN
978-986-02-8974-9
Type
conf
Filename
6015131
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