Title :
Frequency response of amorphous silicon photoconductors
Author :
Otosaka, Hideyuki ; Ebuchi, Shingo ; Maruyama, Takeo ; Iiyama, Koichi ; Ohdaira, Keisuke ; Matsumura, Hideki
Author_Institution :
Kanazawa Univ., Ishikawa, Japan
Abstract :
We fabricated an amorphous silicon photoconductor and measured a sensitivity and frequency response at a wavelength of 650 nm. The maximum sensitivity of 4.6m A/W and the maximum bandwidth of 10 MHz were obtained at the bias voltage of 10 V.
Keywords :
amorphous semiconductors; elemental semiconductors; frequency response; integrated optics; optical fabrication; photoconducting materials; photodetectors; silicon; Si; amorphous silicon photoconductors; bias voltage; frequency response; sensitivity measurement; voltage 10 V; wavelength 650 nm; Bandwidth; Frequency measurement; Frequency response; Photoconducting materials; Photoconductivity; Sensitivity; Silicon;
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2011 16th
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-288-2
Electronic_ISBN :
978-986-02-8974-9
