DocumentCode :
552080
Title :
Enhanced surface antireflection by sharpening vertically aligned silicon nanowires
Author :
Wu, Kai-Chung ; Hung, Yung-Jr ; Lee, San-Liang ; Pan, Yen-Ting
Author_Institution :
Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
fYear :
2011
fDate :
4-8 July 2011
Firstpage :
339
Lastpage :
340
Abstract :
Enhanced antireflection by sharpening vertically aligned silicon nanowires (SiNWs) is demonstrated with simple fabrication procedures over a large area. Enough light trapping and ~92% solar weighted absorption can be achieved with very short SiNWs.
Keywords :
elemental semiconductors; nanowires; reflectivity; silicon; surface treatment; Si; enhanced surface antireflection; light trapping; simple fabrication procedures; solar weighted absorption; vertically aligned silicon nanowires; Etching; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2011 16th
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-288-2
Electronic_ISBN :
978-986-02-8974-9
Type :
conf
Filename :
6015153
Link To Document :
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