Title :
A new 850-nm lateral Si avalanche photodiode in standard CMOS technology
Author :
Li, Zi-Ying ; Chou, Fang-ping ; Wang, Ching-Wen ; Hsin, Yue-Ming
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Abstract :
A new lateral Si avalanche photodiode is designed and implemented in standard 0.18-μm CMOS technology. The measured responsivity and 3-dB bandwidth at 850-nm wavelength are 1.24 A/W and 3.9 GHz, respectively.
Keywords :
CMOS integrated circuits; avalanche photodiodes; integrated optics; CMOS technology; Si; bandwidth 3.9 GHz; integrated optics; lateral Si avalanche photodiode; size 0.18 mum; wavelength 850 nm; CMOS integrated circuits; CMOS technology; Current measurement; Dark current;
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2011 16th
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-288-2
Electronic_ISBN :
978-986-02-8974-9
