DocumentCode :
552151
Title :
Phenolic additives and their effects on blend morphologies of bulk heterojunctions
Author :
Wang, Po-Hsun ; Gong, Fang-Lin ; Huang, Wen-Yao
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Sun Yat-sen Univ., Kaohsiung, Taiwan
fYear :
2011
fDate :
4-8 July 2011
Firstpage :
500
Lastpage :
501
Abstract :
In this study, attempts to add the BPS additives in the active layer. And observed by the XRD, additives will affect the arrangement of the rules of P3HT, leading to increase efficiency.
Keywords :
X-ray diffraction; polymers; P3HT; XRD; blend morphology; bulk heterojunctions; phenolic additives; poly(3-hexylthiophene); Additives; Electrodes; Photovoltaic cells; Resistance; Substrates; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2011 16th
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-288-2
Electronic_ISBN :
978-986-02-8974-9
Type :
conf
Filename :
6015231
Link To Document :
بازگشت