• DocumentCode
    552151
  • Title

    Phenolic additives and their effects on blend morphologies of bulk heterojunctions

  • Author

    Wang, Po-Hsun ; Gong, Fang-Lin ; Huang, Wen-Yao

  • Author_Institution
    Inst. of Electro-Opt. Eng., Nat. Sun Yat-sen Univ., Kaohsiung, Taiwan
  • fYear
    2011
  • fDate
    4-8 July 2011
  • Firstpage
    500
  • Lastpage
    501
  • Abstract
    In this study, attempts to add the BPS additives in the active layer. And observed by the XRD, additives will affect the arrangement of the rules of P3HT, leading to increase efficiency.
  • Keywords
    X-ray diffraction; polymers; P3HT; XRD; blend morphology; bulk heterojunctions; phenolic additives; poly(3-hexylthiophene); Additives; Electrodes; Photovoltaic cells; Resistance; Substrates; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Opto-Electronics and Communications Conference (OECC), 2011 16th
  • Conference_Location
    Kaohsiung
  • Print_ISBN
    978-1-61284-288-2
  • Electronic_ISBN
    978-986-02-8974-9
  • Type

    conf

  • Filename
    6015231