• DocumentCode
    552240
  • Title

    High performance 1180nm InGaAs QDs laser by molecular beam epitaxy

  • Author

    Tzeng, T.E. ; Lin, T.Y. ; Lay, T.S.

  • Author_Institution
    Dept. of Photonics, Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
  • fYear
    2011
  • fDate
    4-8 July 2011
  • Firstpage
    683
  • Lastpage
    684
  • Abstract
    Continuous-wave and pulse lasing are achieved at 1.18μm for In0.75Ga0.25As quantum dots structure grown on GaAs substrate. The threshold current density of 700A/cm2, slope efficiency of 0.279mW/mA, and maximum output power of 40mW are obtained.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical pulse generation; quantum dot lasers; In0.75Ga0.25As-GaAs; continuous wave lasing; molecular beam epitaxy; power 40 mW; pulse lasing; quantum dots laser; wavelength 1180 nm; Gallium arsenide; Laser modes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Opto-Electronics and Communications Conference (OECC), 2011 16th
  • Conference_Location
    Kaohsiung
  • Print_ISBN
    978-1-61284-288-2
  • Electronic_ISBN
    978-986-02-8974-9
  • Type

    conf

  • Filename
    6015323
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=552240