Title :
Fabrication and characteristics of vertical coupled quantum dot nano-pillars
Author :
Chen, H.I. ; Tzeng, T.E. ; Lay, T.S.
Author_Institution :
Dept. of Photonics, Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
Self-organized Au-Ge nano-dots and SiO2 are used as etching mask to fabricate quantum dot (QDs) nano-pillars. The dry etching processes are used to control pillar height. Single nano-pillar characteristics are analyzed by cryogenic cathodoluminescence measurement.
Keywords :
III-V semiconductors; cathodoluminescence; elemental semiconductors; etching; gallium arsenide; germanium; gold; indium compounds; molecular beam epitaxial growth; nanofabrication; nanostructured materials; self-assembly; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; silicon compounds; GaAs; In0.75Ga0.25As-SiO2-Au-Ge; cryogenic cathodoluminescence; dry etching; etching mask; molecular beam epitaxy; self-organized nanodots; vertical coupled quantum dot nanopillars; Lithography; Nanoscale devices; Nickel; Radio frequency;
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2011 16th
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-288-2
Electronic_ISBN :
978-986-02-8974-9
