• DocumentCode
    552262
  • Title

    CdTe QDs sensitized solar cell

  • Author

    Liu, Xiuyong ; Shen, Yue ; Wu, Guizhi ; Qiu, Hengkang ; Cao, Meng ; Gu, Feng ; Wang, Linjun

  • Author_Institution
    Sch. of Mater. Sci. & Eng., Shanghai Univ., Shanghai, China
  • fYear
    2011
  • fDate
    4-8 July 2011
  • Firstpage
    729
  • Lastpage
    730
  • Abstract
    QDs-sensitized solar cells using CdTe QDs as sensitizer and mesoporous-TiO2 as photoanode were fabricated. Open circuit voltage, short circuit current and energy conversion efficiency are 784 mV, 0.6 mA/cm2 and 0.268 %.
  • Keywords
    II-VI semiconductors; anodes; cadmium compounds; mesoporous materials; semiconductor quantum dots; solar cells; titanium compounds; wide band gap semiconductors; CdTe; CdTe QD sensitized solar cell; TiO2; energy conversion efficiency; mesoporous-titania; open circuit voltage; photoanode; sensitizer; short circuit current; voltage 784 mV; Absorption; Electrodes; Fluorescence; Photoconductivity; Photovoltaic cells; Quantum dots; Semiconductor device measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Opto-Electronics and Communications Conference (OECC), 2011 16th
  • Conference_Location
    Kaohsiung
  • Print_ISBN
    978-1-61284-288-2
  • Electronic_ISBN
    978-986-02-8974-9
  • Type

    conf

  • Filename
    6015346
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=552262