DocumentCode :
552262
Title :
CdTe QDs sensitized solar cell
Author :
Liu, Xiuyong ; Shen, Yue ; Wu, Guizhi ; Qiu, Hengkang ; Cao, Meng ; Gu, Feng ; Wang, Linjun
Author_Institution :
Sch. of Mater. Sci. & Eng., Shanghai Univ., Shanghai, China
fYear :
2011
fDate :
4-8 July 2011
Firstpage :
729
Lastpage :
730
Abstract :
QDs-sensitized solar cells using CdTe QDs as sensitizer and mesoporous-TiO2 as photoanode were fabricated. Open circuit voltage, short circuit current and energy conversion efficiency are 784 mV, 0.6 mA/cm2 and 0.268 %.
Keywords :
II-VI semiconductors; anodes; cadmium compounds; mesoporous materials; semiconductor quantum dots; solar cells; titanium compounds; wide band gap semiconductors; CdTe; CdTe QD sensitized solar cell; TiO2; energy conversion efficiency; mesoporous-titania; open circuit voltage; photoanode; sensitizer; short circuit current; voltage 784 mV; Absorption; Electrodes; Fluorescence; Photoconductivity; Photovoltaic cells; Quantum dots; Semiconductor device measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2011 16th
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-288-2
Electronic_ISBN :
978-986-02-8974-9
Type :
conf
Filename :
6015346
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=552262
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