DocumentCode :
552263
Title :
Preparation and Optical properties of AlN films using self-prepared AlN target
Author :
Shi, Tianshi ; Gu, Feng ; Wang, Linjun ; Shen, Yue
Author_Institution :
Sch. of Mater. Sci. & Eng., Shanghai Univ., Shanghai, China
fYear :
2011
fDate :
4-8 July 2011
Firstpage :
731
Lastpage :
732
Abstract :
Aluminum nitride (AlN) films were deposited on FTO substrates by RF sputtering using self-prepared AlN target. The structure and optical properties of AlN films were studied by XRD, SEM and UV/VIS spectrum.
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; scanning electron microscopy; semiconductor growth; semiconductor thin films; sputter deposition; ultraviolet spectra; visible spectra; wide band gap semiconductors; AlN; FTO substrates; RF sputtering; SEM; SnO2:F; UV-vis spectrum; XRD; aluminum nitride films; optical properties; self-prepared target; structural properties; Atmospheric measurements; Educational institutions; Magnetic films; Particle measurements; Pulse measurements; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2011 16th
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-288-2
Electronic_ISBN :
978-986-02-8974-9
Type :
conf
Filename :
6015347
Link To Document :
بازگشت