Title :
A threshold voltage modeling for ultra-deep sub-micron MOSFETs
Author_Institution :
Sch. of Electron. Inf. & Electr. Eng., Changzhou Inst. of Technol., Changzhou, China
Abstract :
A threshold voltage modeling for ultra-deep sub-micron (UDSM) MOSFETs is given by the novel accuracy definition, which includes three parts: the first part is semiconductor surface potential, the second is the voltage on the gate oxide layer, and the third is named the flat-band voltage. In the modeling, the voltage on the gate oxide layer considers the effect of the channel charges and includes short-channel effects. By comparing with the model numerical analyzing and the characteristics simulating, the results of the simulation are basically identical with the designed model.
Keywords :
MOSFET; surface potential; channel charges; flat-band voltage; gate oxide layer; semiconductor surface potential; short-channel effects; threshold voltage modeling; ultradeep submicron MOSFET; Educational institutions; Integrated circuit modeling; Logic gates; MOSFETs; Solid modeling; MOSFET; UDSM; channel charges; short-channel effects; surface potential; threshold voltage; work-function;
Conference_Titel :
Electronics and Optoelectronics (ICEOE), 2011 International Conference on
Conference_Location :
Dalian
Print_ISBN :
978-1-61284-275-2
DOI :
10.1109/ICEOE.2011.6015566
