A threshold voltage modeling for ultra-deep sub-micron MOSFETs

A threshold voltage modeling for ultra-deep sub-micron (UDSM) MOSFETs is given by the novel accuracy definition, which includes three parts: the first part is semiconductor surface potential, the second is the voltage on the gate oxide layer, and the third is named the flat-band voltage. In the modeling, the voltage on the gate oxide layer considers the effect of the channel charges and includes short-channel effects. By comparing with the model numerical analyzing and the characteristics simulating, the results of the simulation are basically identical with the designed model.