Title :
2D analytical framework for compact modeling of the electrostatics in undoped DG MOSFETs
Author :
Schwarz, Mike ; Holtij, Thomas ; Kloes, Alexander ; Iñíguez, Benjamín
Author_Institution :
Tech. Hochschule Mittelhessen, Giessen, Germany
Abstract :
A framework for the 2D analytical closed-form calculation of the electrostatic potential and electric field in undoped or lightly doped Double-Gate MOSFETs (DG-MOSFETs) and Schottky barrier Double-Gate MOSFETs (SB-DG-MOSFETs) in subthreshold region is presented. Solutions for constant and linear boundary conditions are used to model step by step the potential and the electric field for these structures of Double-Gate MOSFETs.
Keywords :
MOSFET; Schottky barriers; electrostatics; semiconductor device models; 2D analytical framework; Schottky barrier; compact modeling; double-gate MOSFET; electric field; electrostatic potential; linear boundary conditions; undoped DG MOSFET; Boundary conditions; Electric potential; Electrostatics; Equations; Integrated circuit modeling; MOSFETs; Mathematical model; 2D Poisson; Double-Gate (DG) MOSFET; Schottky barrier; analytical closed-form; compact modeling; conformal mapping; electric field; electrostatic potential; framework;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2011 Proceedings of the 18th International Conference
Conference_Location :
Gliwice
Print_ISBN :
978-1-4577-0304-1
