Hall effect sensors performance investigation using three-dimensional simulations

Author

Paun, Maria-Alexandra ; Sallese, Jean-Michel ; Kayal, Maher

Author_Institution

STI-IEL-Electron. Lab., Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland

fYear

2011

fDate

16-18 June 2011

Firstpage

450

Lastpage

455

Abstract

Several Hall effect sensors were modeled and evaluated regarding the Hall voltage and sensitivity using 3D physical simulations. For accurate results the numerical offset and its temperature drift were analyzed. The versatility of the simulation allows various Hall sensor implementations. The simulation procedure could guide the designer in choosing the Hall cell optimum fabrication process, shape and dimensions in terms of the performances envisaged to be achieved.

Keywords

Hall effect transducers; computerised instrumentation; digital simulation; numerical analysis; 3D physical simulation; Hall cell optimum fabrication dimension; Hall cell optimum fabrication process; Hall cell optimum fabrication shape; Hall effect sensor performance investigation; numerical offset; temperature drift; three-dimensional physical simulation; Electric potential; Electrostatics; Magnetic fields; Mathematical model; Numerical models; Sensitivity; Sensors; 3D physical simulations; Hall effect sensor; numerical offset/drift;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits and Systems (MIXDES), 2011 Proceedings of the 18th International Conference

Conference_Location

Gliwice

Print_ISBN

978-1-4577-0304-1

Type

conf

Filename

6015957