Title :
Technology and electrical design of IGBT
Author :
Shelibak, Ibrahim ; Nelayev, Vladislav ; Artamonov, Artem
Author_Institution :
Micro- & Nanoelectron. Dept., Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
Power semiconductor devices are important microelectronic components determined by the efficiency, size, and cost of electronic systems for energy application. Exact design of the modern element base for microelectronics provides reliable operation of the system. The paper presents and discusses the results of the IGBT structure technology design. These results were obtained by means of Silvaco software package intended for technology/device simulation.
Keywords :
insulated gate bipolar transistors; power transistors; semiconductor device models; IGBT structure technology design; Silvaco software package; device simulation; electrical design; important microelectronic components; microelectronics; of electronic systems; power semiconductor devices; technology simulation; Annealing; Boron; Insulated gate bipolar transistors; Manufacturing; Microelectronics; P-n junctions; Transistors; IGBT transistor; design; device; electrical characteristics; simulation; technology;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2011 Proceedings of the 18th International Conference
Conference_Location :
Gliwice
Print_ISBN :
978-1-4577-0304-1
