DocumentCode
552376
Title
Adaptive EPFL-EKV long and short channel MOS device models for Qucs, SPICE and modelica circuit simulation
Author
Brinson, M.E. ; Nabijou, H.
Author_Institution
Centre for Commun. Technol., London Metropolitan Univ., London, UK
fYear
2011
fDate
16-18 June 2011
Firstpage
65
Lastpage
70
Abstract
Equation-defined non-linear functional elements are important building blocks in the development of compact semiconductor device models. Current trends in compact device modeling suggest widespread acceptance among the modeling community of Verilog-A, for semiconductor device specification, model exchange and circuit simulation. This paper outlines techniques for the development of adaptive EPFL-EKV long and short channel MOS models which stress user selectable model features and diagnostic capabilities. Adaptive EPFL-EKV nMOS models based on Verilog-A and Modelica are introduced and their performance compared with simulation data obtained using the “Quite universal circuit simulator” (Qucs), SPICE and the Modelica simulation environment.
Keywords
MOSFET; SPICE; hardware description languages; semiconductor device models; Qucs; SPICE; Verilog-A; adaptive EPFL-EKV; compact semiconductor device; equation-defined nonlinear functional elements; long channel MOS device; modelica circuit simulation; quite universal circuit simulator; short channel MOS device; Adaptation models; Equations; FETs; Hardware design languages; Mathematical model; Optical character recognition software; Switches; Adaptive MOS models; EPFL-EKV MOSFET model; Modelica; Qucs; SPICE; Verilog-A; equation-defined device modeling; parameter and equation monitoring;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits and Systems (MIXDES), 2011 Proceedings of the 18th International Conference
Conference_Location
Gliwice
Print_ISBN
978-1-4577-0304-1
Type
conf
Filename
6016035
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