Using the light-impact model for p-type and n-type poly-TFT in circuits

Author

Papadopoulos, N.P. ; Hatzopoulos, A.A. ; Papakostas, D.K. ; Picos, R. ; Dimitriadis, C.A.

Author_Institution

Dept. of Electr. & Comput. Eng., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece

fYear

2011

fDate

16-18 June 2011

Firstpage

113

Lastpage

118

Abstract

This paper describes and verifies a light impact model (LIM) for both p-type and n-type poly TFTs. At first the ratio of the produced current under a specific light intensity versus the `dark´ current is calculated. Next, comparative results between measurements and simulated characteristics are presented for different sizes of W/L, different values of the Vds, Vgs voltages and of light intensities. Finally, the application of the LIM in the simulation of an optical-feedback driver is given.

Keywords

dark conductivity; optical feedback; semiconductor device models; thin film transistors; dark current; light impact model; light-impact model; optical-feedback driver; p-type polyTFT; thin film transistors; Grain boundaries; Integrated circuit modeling; Lighting; Mathematical model; Organic light emitting diodes; Thin film transistors; Light; modeling polysilicon thin-film transistors (poly-Si TFTs); n-type; optical; optical feedback; p-type;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits and Systems (MIXDES), 2011 Proceedings of the 18th International Conference

Conference_Location

Gliwice

Print_ISBN

978-1-4577-0304-1

Type

conf

Filename

6016037