DocumentCode :
552381
Title :
Enhanced NQS lauritzen diode model
Author :
Sochová, Lenka ; Bet´ak, Petr ; Plojhar, Jan
Author_Institution :
Characterization & Modeling, ON Design Czech s. r. o, Brno, Czech Republic
fYear :
2011
fDate :
16-18 June 2011
Firstpage :
82
Lastpage :
84
Abstract :
This paper deals with enhancement of a PN diode standard model towards including substrate PN junction, and reverse recovery effect models. This leads to improvement in power management, EMC and switching application design.
Keywords :
electromagnetic compatibility; p-n junctions; semiconductor device models; semiconductor diodes; EMC; NQS lauritzen diode model; PN diode standard model; power management; reverse recovery effect models; substrate PN junction; switching application design; Current measurement; Data models; Integrated circuit modeling; Junctions; Mathematical model; SPICE; Substrates; Ebers-Moll model; NQS Lauritzen model; macro-model; reverse recovery time; substrate current model;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2011 Proceedings of the 18th International Conference
Conference_Location :
Gliwice
Print_ISBN :
978-1-4577-0304-1
Type :
conf
Filename :
6016040
Link To Document :
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