Title :
A 6-in-1 IGBT module performance evaluation platform determining the trade-off between dV/dt and turn-on loss of different IGBT / FwDi chip setups
Author :
Honsberg, M. ; Radke, Thomas ; Ishii, Kazuki ; Manotobu, J.
Author_Institution :
MITSUBISHI Electr. Eur. B.V., Ratingen, Germany
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
Achieving good loss performance by high switching speed at low gate resistance is trading-off with the system´s EMI behaviour. An evaluation platform has been developed to characterize 6-in-1 IGBT modules and to determine their dV/dt versus turn-on loss as function of the gate resistance. The electrical investigation concludes with a chart indicating the trade-off between turn-on switching loss versus dV/dt parameterized as a function of the sum of internal and external gate resistance of a 150A/1200V 6-in-1 IGBT module. The SMPS part of the developed test platform solution has been thermally analysed.
Keywords :
electromagnetic interference; insulated gate bipolar transistors; losses; switched mode power supplies; FwDi chip setups; IGBT module performance evaluation platform; SMPS; current 150 A; low gate resistance; system EMI behaviour; test platform solution; turn-on loss; turn-on switching loss; voltage 1200 V; DC-DC power converters; Insulated gate bipolar transistors; Logic gates; Loss measurement; Switched-mode power supply; Switches; Switching loss; EMC/EMI; IGBT; Power Semiconductor device; Switching losses;
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3