A new power MOSFET generation designed for synchronous rectification

Author

Siemieniec, R. ; Mosslacher, C. ; Blank, O. ; Rosch, M. ; Frank, Michael ; Hutzler, M.

Author_Institution

INFINEON Technol. AUSTRIA AG, Villach, Austria

fYear

2011

fDate

Aug. 30 2011-Sept. 1 2011

Firstpage

1

Lastpage

10

Abstract

Low-voltage MOSFETs are widely used in the synchronous rectifying stages of power supplies. To allow a high efficiency in light-load conditions, the power MOSFET not only needs to meet general requirements like low on-resistance, low gate charge and good avalanche capability, but must also have a low output capacitance and low reverse-recovery charge. The paper shows how those requirements were met in our newest generation of power MOSFET starting with the 60 V class.

Keywords

power MOSFET; switched mode power supplies; avalanche capability; gate charge; light-load condition; low on-resistance requirement; low-voltage MOSFET; output capacitance; power MOSFET generation; power supply; reverse-recovery charge; synchronous rectifying stage; Capacitance; Logic gates; Power MOSFET; Power generation; Strontium; Switching loss; MOSFET; Measurement; New switching devices; Simulation; Switched-mode power supply;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on

Conference_Location

Birmingham

Print_ISBN

978-1-61284-167-0

Electronic_ISBN

978-90-75815-15-3

Type

conf

Filename

6020116