Title :
A new power MOSFET generation designed for synchronous rectification
Author :
Siemieniec, R. ; Mosslacher, C. ; Blank, O. ; Rosch, M. ; Frank, Michael ; Hutzler, M.
Author_Institution :
INFINEON Technol. AUSTRIA AG, Villach, Austria
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
Low-voltage MOSFETs are widely used in the synchronous rectifying stages of power supplies. To allow a high efficiency in light-load conditions, the power MOSFET not only needs to meet general requirements like low on-resistance, low gate charge and good avalanche capability, but must also have a low output capacitance and low reverse-recovery charge. The paper shows how those requirements were met in our newest generation of power MOSFET starting with the 60 V class.
Keywords :
power MOSFET; switched mode power supplies; avalanche capability; gate charge; light-load condition; low on-resistance requirement; low-voltage MOSFET; output capacitance; power MOSFET generation; power supply; reverse-recovery charge; synchronous rectifying stage; Capacitance; Logic gates; Power MOSFET; Power generation; Strontium; Switching loss; MOSFET; Measurement; New switching devices; Simulation; Switched-mode power supply;
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3
