Title :
Enhanced TFTs model using novel nano-composite high-k gate dielectric
Author :
Thabet, A. ; Atef, M. ; Mobarak, Y.A.
Author_Institution :
Nano-Technol. Res. Centre, South Valley Univ., Aswan, Egypt
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
This paper demonstrates an analytical suggested model for enhancing the performance of Thin-Film Transistors (TFTs) by replacing the conventional silicon dioxide gate dielectric with high-k gate dielectric novel nano-composite PVP/La2O3 (kox=25). Our suggested model has a Single nano-composite Material Gate SMG MOSFETs. Also, it has been studied the effects of the gate-dielectric permittivity, spacer oxide permittivity, gate length, and the width of TFTs structure.
Keywords :
MOSFET; geometry; high-k dielectric thin films; lanthanum compounds; nanocomposites; plastics; thin film transistors; TFT performance enhancement; gate length; gate-dielectric permittivity; nanocomposite high-k gate dielectric; single nanocomposite material gate SMG MOSFET; small geometry MOSFET; spacer oxide permittivity; thin-film transistor performance enhancement; Capacitance; Dielectrics; Electric potential; Logic gates; MOSFETs; Thin film transistors; Threshold voltage; Nano-composite Gate Dielectric; Threshold Voltage;
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3
