Title :
High-temperature die-attaches for SiC power devices
Author :
Masson, Amandine ; Buttay, Cyril ; Morel, Herve ; Raynaud, C. ; Hascoet, S. ; Gremillard, L.
Author_Institution :
Lab. Ampere, Univ. de Lyon, Lyon, France
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
SiC devices have been substituted to Si dies for high temperature applications. However, classical packagings are not adapted for harsh environment and new solutions for back-side die attach must be envisaged. In this paper, theoretical basis and results for nano-silver sintering Transient Liquid Phase Bonding will be presented.
Keywords :
high-temperature electronics; microassembling; power semiconductor devices; semiconductor device packaging; silicon compounds; sintering; wide band gap semiconductors; SiC; back-side die attaching; high temperature application; high-temperature die-attaching; nanosilver sintering transient liquid phase bonding; power device; Bonding; Gold; Joints; Silicon carbide; Substrates; Temperature; Temperature measurement; High temperature electronics; Nanotechnology; Packaging; Reliability; Silicon carbide;
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3
