• DocumentCode
    553327
  • Title

    IGBT series connection under Active Voltage Control

  • Author

    Weiwei He ; Palmer, Pere ; Xueqiang Zhang ; Snook, Megan ; Zhihan Wang

  • Author_Institution
    Dept. of Eng., Univ. of Cambridge, Cambridge, UK
  • fYear
    2011
  • fDate
    Aug. 30 2011-Sept. 1 2011
  • Firstpage
    1
  • Lastpage
    9
  • Abstract
    In this paper an Active Voltage Control (AVC) technique is presented, for series connection of insulated-gate-bipolar-transistors (IGBT) and control of diode recovery. The AVC technique can control the switching trajectory of an IGBT according to a pre-set reference signal. In series connections, every series connected IGBT follows the reference and so that the dynamic voltage sharing is achieved. For the static voltage balancing, the AVC technique can clamp the highest collector-to-emitter voltage to a pre-set clamping voltage level. By selecting the value of the clamping voltage, the difference among series connected IGBTs can be controlled in an accepted range. Another key advantage for AVC is that by changing the reference signal at turn-on, the diode recovery can be optimized.
  • Keywords
    insulated gate bipolar transistors; reference circuits; voltage control; IGBT series connection; active voltage control; collector-to-emitter voltage; diode recovery control; dynamic voltage sharing; insulated gate bipolar transistors; preset clamping voltage level; preset reference signal; static voltage balancing; switching trajectory control; Automatic voltage control; Insulated gate bipolar transistors; Logic gates; Switches; Transient analysis; Diode; IGBT; Power semiconductor device; Soft switching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
  • Conference_Location
    Birmingham
  • Print_ISBN
    978-1-61284-167-0
  • Electronic_ISBN
    978-90-75815-15-3
  • Type

    conf

  • Filename
    6020182