Title :
A robust top structure design in a field-stop emitter-implant trench-gate IGBT for improved short circuit ruggedness
Author :
Alessandria, A. ; Fragapane, Leonardo
Author_Institution :
STMicroelectron. s.r.l., Catania, Italy
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
This paper is related to the top structure design optimization in the case of a 1.2KV Field-Stop (FS) Emitter-implant (EI) Trench-gate IGBT. In particular we focused our attention on the electrical behavior of the device and, above all, on some specific electrical characteristics in order to address all the applications where the short-circuit withstanding time is a key parameter. The results of the optimization are shown in this paper through a simulation study.
Keywords :
insulated gate bipolar transistors; optimisation; short-circuit currents; electrical characteristics; emitter-implant IGBT; field-stop IGBT; optimization; robust top structure; short circuit ruggedness; trench-gate IGBT; voltage 1.2 kV; Electric variables; Insulated gate bipolar transistors; Logic gates; Numerical simulation; Performance evaluation; Strips; Transistors; Design; IGBT; Power semiconductor device; Simulation;
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3
