Comparison of chip- and module-measurements with high power IGBTs and RC-IGBTs

Author

Wigger, D. ; Eckel, Hans-Gunter

Author_Institution

Univ. of Rostock, Rostock, Germany

fYear

2011

fDate

Aug. 30 2011-Sept. 1 2011

Firstpage

1

Lastpage

8

Abstract

Proper scaling of single chip measurements to module-level is an important task during the development of power semiconductor chips. In this paper it is shown how different the comparison between the reverse recovery behaviour of diodes in a conventional IGBT module and of the diode-mode of RC-IGBT can be on chip-level and on module level. The reason for these differences is, that in a conventional high voltage, high power IGBT module only one third of the chips are diodes, while all RC-IGBT chips are operating as diode. This leads to different scaling factors for conventional modules and RC-IGBT modules.

Keywords

insulated gate bipolar transistors; modules; power bipolar transistors; power semiconductor diodes; semiconductor device packaging; IGBT diode module; RC-IGBT diode-mode; high power IGBT; module-level measurement; power semiconductor chip; reverse conducting IGBT diode-mode; reverse recovery behaviour; scaling factor; single chip measurement; Current measurement; Inductance; Insulated gate bipolar transistors; Integrated circuits; Logic gates; Semiconductor device measurement; Stress; Diode; IGBT; Reverse recovery; Voltage Source Inverters (VSI);

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on

Conference_Location

Birmingham

Print_ISBN

978-1-61284-167-0

Electronic_ISBN

978-90-75815-15-3

Type

conf

Filename

6020282