Title :
Modeling of IGBTs with focus on voltage dependency of terminal capacitances
Author :
Tominaga, Shoji ; Urushibata, Hiroaki ; Fujita, Hideaki ; Akagi, Hirofumi ; Horiguchi, Takeshi ; Kinouchi, Shin-ichi ; Oi, Takeshi
Author_Institution :
TOKYO Inst. OF Technol., Tokyo, Japan
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
This paper presents a modeling of IGBTs with a focus on voltage dependency of capacitances between terminals of the IGBT. The proposed model is based on a physics-based IGBT model for circuit simulators to get accurate switching waveforms by taking account of the variable capacitances depending on the voltage between the terminals of the IGBT model. The basic feature is that the simulation accuracy of switching waveforms can be improved by applying the measured capacitances to the capacitors between the terminals. The simulated results by using the proposed IGBT model are in good agreement with experimental results.
Keywords :
insulated gate bipolar transistors; semiconductor device models; circuit simulators; physics-based IGBT model; switching waveforms; terminal capacitances; voltage dependency; Capacitance; Capacitors; Insulated gate bipolar transistors; Integrated circuit modeling; Load modeling; Logic gates; Mathematical model; Device modeling; IGBT; Simulation;
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3