Title :
The influence of asymmetries on the parallel connection of IGBT chips under short-circuit condition
Author :
Basler, Thomas ; Lutz, Josef ; Jakob, Roland ; Bruckner, Thomas
Author_Institution :
Dept. of Power Electron. & EMC, Chemnitz Univ. of Technol., Chemnitz, Germany
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
This paper describes the influence of asymmetries on the parallel connection of high-voltage IGBT chips under short-circuit condition. Especially under short-circuit type two even small asymmetries in the output characteristics of paralleled IGBT chips reduce the short-circuit capability of the parallel connection drastically.
Keywords :
insulated gate bipolar transistors; integrated circuit interconnections; short-circuit currents; IGBT chips; parallel connection; short-circuit condition; Current measurement; Electrical resistance measurement; Insulated gate bipolar transistors; Logic gates; Resistors; Semiconductor device measurement; Voltage measurement; IGBT; Parallel Operation; Robustness;
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3
