Title :
Development of a boost converter for PV systems based on SiC BJTs
Author :
Hensel, Andreas ; Wilhelm, Christian ; Kranzer, Dirk
Author_Institution :
Fraunhofer-Inst. for Solar Energy Syst. ISE, Freiburg, Germany
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
In the past years new power switching devices based on wide bandgap materials like silicon carbide (SiC) were more and more coming up, promising more efficient, smaller and lighter converter circuits. This paper demonstrates the advantages of the SiC bipolar junction transistor (BJT) by the realisation of a boost converter stage for photovoltaic (PV) systems. First the key attributes (on-state behaviour and switching losses) of the devices are reviewed. By this measurements, the driving circuits in the boost converter are optimized in order to achieve high efficiency. The application of SiC BJTs in a high efficient 5 kW boost converter stage for PV systems (300 V → 800 V) is demonstrated and the results are compared to the results obtained with the application of common silicon (Si) IGBTs.
Keywords :
bipolar transistor circuits; photovoltaic power systems; power convertors; silicon compounds; wide band gap semiconductors; BJT; PV systems; SiC; bipolar junction transistor; boost converter stage; converter circuits; driving circuits; on-state behaviour; photovoltaic systems; power 5 kW; power switching devices; switching losses; wide bandgap materials; Current measurement; Insulated gate bipolar transistors; Integrated circuits; Silicon; Silicon carbide; Switches; Switching frequency; Bipolar Junction Transistor (BJT); Converter circuit; Device application; Device characterisation; Efficiency; High power density systems; Photovoltaics; Power semiconductor device; Renewable energy systems; Silicon Carbide (SiC); Wide bandgab devices;
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3
