Title :
Comparison of press-pack IGBT at hard switching and clamp operation for medium voltage converters
Author :
Alvarez, R. ; Filsecker, Felipe ; Bernet, Steffen
Author_Institution :
Tech. Univ. Dresden, Dresden, Germany
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
The newly developed press-pack IGBT devices compete with IGCTs in high power industrial applications. These new semiconductors were already studied in detail for hard switching and for clamp operation. Nevertheless, a comparison of the basic switching characteristics of the IGBT press-pack devices for hard switching and clamp operation has not been done so far. This paper compares the switching behavior, the switching losses and the safe operating area trajectories of the new 85 mm, 4.5 kV, 1.2 kA press-pack SPT+ IGBT for hard switching and clamp operation. The methods used for the experimental characterization and comparison are explained in detail.
Keywords :
clamps; losses; power semiconductor switches; switching convertors; IGCT; clamp operation; current 1.2 kA; hard switching; industrial application; medium voltage converters; press pack IGBT devices; size 85 mm; switching losses; voltage 4.5 kV; Clamps; Inductance; Insulated gate bipolar transistors; Semiconductor diodes; Stress; Switches; Switching loss; Device application; Device characterization; IGBT; Industrial application; Packaging; Test bench;
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3
