A new approach to higher density rectifier with SiC power devices for 380 V DC distribution systems

Author

Hayashi, Yasuhiro ; Mino, Masayuki

Author_Institution

NTT Facilities, Inc., Tokyo, Japan

fYear

2011

fDate

Aug. 30 2011-Sept. 1 2011

Firstpage

1

Lastpage

8

Abstract

A new approach has been proposed for creating higher power density 200Vac / 380Vdc converters to be installed in 380 V DC distribution systems. This approach requires a high density 3-Phase PWM converter. A SiC-JFETs and SiC-SBDs pair is attractive because of its low conduction loss created by a synchronous rectification and low switching loss by using uni-polar power devices. A design has already been proposed and experimentally verified. The feasibility has been proven by comparing it with the existing power unit for 380 V DC distribution systems.

Keywords

junction gate field effect transistors; rectifiers; silicon compounds; DC distribution systems; JFET; SiC; higher density rectifier; higher power density; switching loss; synchronous rectification; unipolar power devices; voltage 380 V; Capacitors; DC-DC power converters; Power generation; Power supplies; Pulse width modulation converters; Semiconductor diodes; Silicon carbide; DC Power Supply; Design; High Power Density System; Silicon Carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on

Conference_Location

Birmingham

Print_ISBN

978-1-61284-167-0

Electronic_ISBN

978-90-75815-15-3

Type

conf

Filename

6020546