Characterization of a new 1.2 kV IGBT 3L-NPC phase-leg module for low voltage applications

Author

Sprenger, Michael ; Alvarez, R. ; Staudt, I. ; Bernet, Steffen

Author_Institution

Tech. Univ. Dresden, Dresden, Germany

fYear

2011

fDate

Aug. 30 2011-Sept. 1 2011

Firstpage

1

Lastpage

10

Abstract

This paper presents a new 3L-NPC phase-leg module, the SKiM^®4. The DCB structure is shown and information about electrical and mechanical module parameters are given. The test-bench and the experiments performed for the characterization of the module are explained. Calculations and results are given for leakage inductance, di/dt, dv/dt, switching power and energy.

Keywords

electrical faults; insulated gate bipolar transistors; modules; power semiconductor devices; DCB structure; IGBT 3L-NPC phase leg module; electrical module parameter; leakage inductance; low voltage application; mechanical module parameter; switching power; voltage 1.2 kV; Insulated gate bipolar transistors; Logic gates; Power conversion; Semiconductor diodes; Switches; Temperature measurement; Alternative energy; High power density systems; IGBT; Multilevelconverters; Packaging; Voltage Source Converter (VSC);

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on

Conference_Location

Birmingham

Print_ISBN

978-1-61284-167-0

Electronic_ISBN

978-90-75815-15-3

Type

conf

Filename

6020585