Title :
Improvements in SOA ruggedness of 6.5 kV IGBTs
Author :
Bhatnagar, P. ; Waind, P. ; Coulbeck, Lee ; Deviny, Ian ; Thomson, J.
Author_Institution :
DYNEX Semicond., Lincoln, UK
fDate :
Aug. 30 2011-Sept. 1 2011
Abstract :
We have presented the work done on optimization of the 6.5kV IGBT device for increasing the safe operating area both for RBSOA and SCSOA. The optimization of the bipolar gain of the IGBT has been studied. We have shown that reducing gate capacitance by 50% combined with increased bipolar gain improves the short circuit robustness. The short circuit current capability of the 6.5 kV IGBT chip is significantly improved using the terrace gate structure.
Keywords :
insulated gate bipolar transistors; power semiconductor devices; IGBT; RBSOA; SCSOA; SOA ruggedness; bipolar gain; current capability; gate capacitance; terrace gate structure; voltage 6.5 kV; Capacitance; Delay; Insulated gate bipolar transistors; Logic gates; Semiconductor optical amplifiers; Stress; Switching circuits; Bipolar; IGBT; RBSOA; SCSOA; Short Circuit;
Conference_Titel :
Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-61284-167-0
Electronic_ISBN :
978-90-75815-15-3
