A high power density SiC-JFET-based matrix converter

Author

de Lillo, Liliana ; Empringham, Lee ; Schulz, Markus ; Wheeler, Pat

Author_Institution

Power Electron. Machines & Control Group, Univ. of Nottingham, Nottingham, UK

fYear

2011

fDate

Aug. 30 2011-Sept. 1 2011

Firstpage

1

Lastpage

8

Abstract

Continuous development in semiconductor material allows designers engineers to push power density of inverter technology to new limits. The Matrix Converter topology itself, by not including the large DC-link capacitors of a typical rectifier-DC-link - Inverter topology offers an advantageous starting point in order to achieve a reliable and compact implementation of a power converter capable of working at higher operating temperatures. This paper describes the design of a Silicon Carbide JFET-based matrix converter which has been developed to reach a target of power density of 20kW/dm³ with forced air cooling, based on Infineon Technology for the power circuit and its control.

Keywords

junction gate field effect transistors; matrix convertors; power field effect transistors; silicon compounds; SiC; forced air cooling; high power density-JFET; inverter technology; inverter topology; matrix converter topology; power circuit; power converter; power density; rectifier-DC-link capacitors; semiconductor material; Clamps; JFETs; Matrix converters; Multichip modules; Schottky diodes; Silicon carbide; Switches; AC/AC Converter; JFET; Matrix Converters; Silicon Carbide (SiC);

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on

Conference_Location

Birmingham

Print_ISBN

978-1-61284-167-0

Electronic_ISBN

978-90-75815-15-3

Type

conf

Filename

6020635