DocumentCode :
553864
Title :
Plasma chemical etching of silicon in chlorine to containing plasma, used in nanoelectronics
Author :
Bogomolov, B.K.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
Volume :
1
fYear :
2011
fDate :
22-24 Aug. 2011
Firstpage :
205
Lastpage :
210
Abstract :
It is experimentally confirmed that transition a topokinetic stage plasma of chemical etching of silicon in diffusion occurs around a maximum of dependence of speed of etching from the oxygen maintenance in plasma CF2Cl2/O2. The load effect is studied. Results of article well correlate with the data received in the reactor of high density plasma TCP 2300 Versys Kiyo LAM Research corporations.
Keywords :
diffusion; elemental semiconductors; nanoelectronics; silicon; sputter etching; Si; TCP 2300 Versys Kiyo LAM Research corporation; diffusion etching speed; load effect; nanoelectronics; oxygen maintenance; plasma chemical etching; topokinetic stage plasma; Heating; Inductors; Nitrogen; Oxygen; RNA; Silicon; nanoelectronics; plasma etching; silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Strategic Technology (IFOST), 2011 6th International Forum on
Conference_Location :
Harbin, Heilongjiang
Print_ISBN :
978-1-4577-0398-0
Type :
conf
DOI :
10.1109/IFOST.2011.6021004
Filename :
6021004
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=553864
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