• DocumentCode
    553864
  • Title

    Plasma chemical etching of silicon in chlorine to containing plasma, used in nanoelectronics

  • Author

    Bogomolov, B.K.

  • Author_Institution
    Novosibirsk State Tech. Univ., Novosibirsk, Russia
  • Volume
    1
  • fYear
    2011
  • fDate
    22-24 Aug. 2011
  • Firstpage
    205
  • Lastpage
    210
  • Abstract
    It is experimentally confirmed that transition a topokinetic stage plasma of chemical etching of silicon in diffusion occurs around a maximum of dependence of speed of etching from the oxygen maintenance in plasma CF2Cl2/O2. The load effect is studied. Results of article well correlate with the data received in the reactor of high density plasma TCP 2300 Versys Kiyo LAM Research corporations.
  • Keywords
    diffusion; elemental semiconductors; nanoelectronics; silicon; sputter etching; Si; TCP 2300 Versys Kiyo LAM Research corporation; diffusion etching speed; load effect; nanoelectronics; oxygen maintenance; plasma chemical etching; topokinetic stage plasma; Heating; Inductors; Nitrogen; Oxygen; RNA; Silicon; nanoelectronics; plasma etching; silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Strategic Technology (IFOST), 2011 6th International Forum on
  • Conference_Location
    Harbin, Heilongjiang
  • Print_ISBN
    978-1-4577-0398-0
  • Type

    conf

  • DOI
    10.1109/IFOST.2011.6021004
  • Filename
    6021004
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=553864