DocumentCode :
553915
Title :
Analysis of a MOSFET operating as an RF power detector
Author :
Piovani, D.S. ; de Sousa, F.R.
Author_Institution :
Floripa Design House (DH-NIMETEC), Florianopolis, Brazil
fYear :
2011
fDate :
11-12 Aug. 2011
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents the analysis of a MOSFET biased in the triode region operating as a power detector. Two modes of operation are evaluated, current mode and voltage mode. For each mode, we develop expressions relating a DC signal and the squared amplitude of a RF signal. A MOSFET compact model, valid for any inversion level, is used, permitting to predict the detector behavior with a reasonable accuracy. Optimization of the CMOS power detector is discussed remarking the trade-off between sensor´s sensitivity and input impedance. The approach is validated through simulations and measurements results, which present good agreement with the theory.
Keywords :
CMOS integrated circuits; MOSFET; current-mode circuits; electric sensing devices; power integrated circuits; radiofrequency integrated circuits; semiconductor device models; triodes; CMOS power detector; MOSFET; MOSFET compact model; RF power detector; current mode operation; input impedance; inversion level; triode region; voltage mode operation; Current measurement; Impedance; MOSFET circuits; Radio frequency; Sensors; Transistors; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Argentine School of Micro-Nanoelectronics Technology and Applications (EAMTA), 2011
Conference_Location :
Buenos Aires
Print_ISBN :
978-1-4577-1236-4
Type :
conf
Filename :
6021276
Link To Document :
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