• DocumentCode
    553923
  • Title

    Charge trapping/detrapping in HfO2-based MOS devices

  • Author

    Salomone, L. Sambuco ; Carbonetto, S.H. ; Garcia Inza, Mariano A. ; Lipovetzky, J. ; Redin, E.G. ; Campabadal, F. ; Faigon, A.

  • Author_Institution
    Dept. de Fis., Univ. de Buenos Aires, Buenos Aires, Argentina
  • fYear
    2011
  • fDate
    11-12 Aug. 2011
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    The charge trapping/detrapping under normal operating conditions in MOS devices with HfO2 as insulating layer is studied. The hysteresis in the capacitance-voltage curves was analyzed and the voltage for a given capacitance was tracked in time. A simple tunneling front model is proposed in order to reproduce the observed curves and to obtain the relevant physical parameters.
  • Keywords
    MOS capacitors; hafnium compounds; tunnelling; HfO2; MOS devices; capacitance-voltage curve hysteresis; charge detrapping; charge trapping; insulating layer; tunneling front model; Capacitance; Capacitance-voltage characteristics; Electron traps; Hafnium compounds; Hysteresis; Tunneling; High-K gate dielectrics; MOS devices; hysteresis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Argentine School of Micro-Nanoelectronics Technology and Applications (EAMTA), 2011
  • Conference_Location
    Buenos Aires
  • Print_ISBN
    978-1-4577-1236-4
  • Type

    conf

  • Filename
    6021284
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=553923