DocumentCode
554080
Title
Performance comparison of artificial intelligence networks in nanoscale MOSFET modeling
Author
Nohoji, Amir Hossein Abdollahi ; Farokhi, Farhad ; Zamani, Mahdi
Author_Institution
Sci. Assoc. of Electr. & Electron. Eng., Islamic Azad Univ., Tehran, Iran
Volume
2
fYear
2011
fDate
26-28 July 2011
Firstpage
807
Lastpage
810
Abstract
In this paper, different types of artificial intelligence networks were compared in order to simulate the nonlinear behavior of nanoscale MOSFETs. The accuracy of the approaches in determining the device drain current and the training time were discussed. The training data was generated in Hspice environment and imported in Matlab7.5 for simulation. Finally, optimized structures for accurate and fast device simulations were introduced individually.
Keywords
MOSFET; SPICE; artificial intelligence; mathematics computing; nanoelectronics; HSPICE environment; Matlab7.5; artificial intelligence networks; device drain current; nanoscale MOSFET modeling; Computational modeling; Integrated circuit modeling; MOSFET circuits; Mathematical model; Neurons; Semiconductor device modeling; Solid modeling; Artificial intelligence network; MOSFET modeling; fuzzy system; neural network;
fLanguage
English
Publisher
ieee
Conference_Titel
Natural Computation (ICNC), 2011 Seventh International Conference on
Conference_Location
Shanghai
ISSN
2157-9555
Print_ISBN
978-1-4244-9950-2
Type
conf
DOI
10.1109/ICNC.2011.6022244
Filename
6022244
Link To Document