Title :
Performance comparison of artificial intelligence networks in nanoscale MOSFET modeling
Author :
Nohoji, Amir Hossein Abdollahi ; Farokhi, Farhad ; Zamani, Mahdi
Author_Institution :
Sci. Assoc. of Electr. & Electron. Eng., Islamic Azad Univ., Tehran, Iran
Abstract :
In this paper, different types of artificial intelligence networks were compared in order to simulate the nonlinear behavior of nanoscale MOSFETs. The accuracy of the approaches in determining the device drain current and the training time were discussed. The training data was generated in Hspice environment and imported in Matlab7.5 for simulation. Finally, optimized structures for accurate and fast device simulations were introduced individually.
Keywords :
MOSFET; SPICE; artificial intelligence; mathematics computing; nanoelectronics; HSPICE environment; Matlab7.5; artificial intelligence networks; device drain current; nanoscale MOSFET modeling; Computational modeling; Integrated circuit modeling; MOSFET circuits; Mathematical model; Neurons; Semiconductor device modeling; Solid modeling; Artificial intelligence network; MOSFET modeling; fuzzy system; neural network;
Conference_Titel :
Natural Computation (ICNC), 2011 Seventh International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-9950-2
DOI :
10.1109/ICNC.2011.6022244
