Electronic transport and photovoltaic properties of La0.4Ca0.6MnO3/Si heterojunction at high temperature

Author

Liu, X.J. ; Ni, Huijuan ; Zhao, Kai ; Zhao, S.Q. ; Yu-Chau Kong ; Wong, H.K.

Author_Institution

Coll. of Sci., China Univ. of Pet., Beijing, China

Volume

2

fYear

2011

fDate

12-14 Aug. 2011

Firstpage

722

Lastpage

724

Abstract

We have investigated the electronic transport and photovoltaic properties of the La_0.4Ca_0.6MnO₃/Si heterojunction as the temperature grows from 300 to 673 K. The rectifying behavior and the junction differential resistance change with increasing temperature, which can be explained by considering the energy-band structure evolvement at different temperatures, and thus give rise to a change of photovoltaic properties with increasing temperature. This understanding of the temperature related current-voltage behavior of oxide heterostructures above room temperature should open a route for devising future microelectronic devices working at high temperature.

Keywords

band structure; calcium compounds; interface states; lanthanum compounds; photovoltaic effects; rectification; La_0.4Ca_0.6MnO₃-Si; Si; current-voltage property; electronic transport; energy-band structure; heterojunction; junction differential resistance; photovoltaic properties; rectification; temperature 300 K to 673 K; Heterojunctions; Resistance; Silicon; Substrates; Temperature; Temperature measurement; electronic transport properties; high temperature; manganitefilm; photovoltaic properties;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic and Mechanical Engineering and Information Technology (EMEIT), 2011 International Conference on

Conference_Location

Harbin, Heilongjiang, China

Print_ISBN

978-1-61284-087-1

Type

conf

DOI

10.1109/EMEIT.2011.6023150

Filename

6023150