Title :
Electronic transport and photovoltaic properties of La0.4Ca0.6MnO3/Si heterojunction at high temperature
Author :
Liu, X.J. ; Ni, Huijuan ; Zhao, Kai ; Zhao, S.Q. ; Yu-Chau Kong ; Wong, H.K.
Author_Institution :
Coll. of Sci., China Univ. of Pet., Beijing, China
Abstract :
We have investigated the electronic transport and photovoltaic properties of the La0.4Ca0.6MnO3/Si heterojunction as the temperature grows from 300 to 673 K. The rectifying behavior and the junction differential resistance change with increasing temperature, which can be explained by considering the energy-band structure evolvement at different temperatures, and thus give rise to a change of photovoltaic properties with increasing temperature. This understanding of the temperature related current-voltage behavior of oxide heterostructures above room temperature should open a route for devising future microelectronic devices working at high temperature.
Keywords :
band structure; calcium compounds; interface states; lanthanum compounds; photovoltaic effects; rectification; La0.4Ca0.6MnO3-Si; Si; current-voltage property; electronic transport; energy-band structure; heterojunction; junction differential resistance; photovoltaic properties; rectification; temperature 300 K to 673 K; Heterojunctions; Resistance; Silicon; Substrates; Temperature; Temperature measurement; electronic transport properties; high temperature; manganitefilm; photovoltaic properties;
Conference_Titel :
Electronic and Mechanical Engineering and Information Technology (EMEIT), 2011 International Conference on
Conference_Location :
Harbin, Heilongjiang, China
Print_ISBN :
978-1-61284-087-1
DOI :
10.1109/EMEIT.2011.6023150
