Title :
Bit-to-Bit Interference of Multibit Nanoelectromechanical Memory Cells (T Cells)
Author :
Jae Hwan Han ; Kwanyong Kim ; Woo Young Choi
Author_Institution :
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
Abstract :
The bit-to-bit interference (BI) of multibit nano-electromechanical memory cells (T cells) has been investigated, and an analytical model of BI has been derived. The relationship between the BI and the cell size is discussed using both the analytical and the finite-element-method models. It has been found that BI is independent of the cell size as long as all the geometrical dimensions are scaled down in proportion. However, in actual cases, BI becomes more severe as the cell size decreases owing to the nonscaling parameters.
Keywords :
finite element analysis; nanoelectromechanical devices; random-access storage; BI analytical model; T cells; bit-to-bit interference; cell size; finite-element-method models; geometrical dimensions; multibit nanoelectromechanical memory cells; nonvolatile memory; Analytical models; Arrays; Bismuth; Finite element analysis; Force; Interference; Structural beams; Bit-to-bit interference (BI); T cell; nanoelectromechanical (NEM) memory;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2014.2314217
