Title :
Ring oscillator switching noise under NBTI wearout
Author :
Fernández-García, R. ; Gil, I. ; Ruiz, J.M. ; Morata, M.
Author_Institution :
Electron. Eng. Dept., UPC Barcelona Tech, Terrassa, Spain
Abstract :
In this paper the switching noise of a CMOS ring oscillator has been analysed when their pFETs are subjected to negative bias temperature instability (NBTI). The impact of pFET under NBTI has been experimentally quantified whereas CMOS ring oscillator frequency and the switching noise has been analysed by means of electrical full-model simulation. The results show that the impact on the electromagnetic compatibility behaviour increases with NBTI wearout.
Keywords :
CMOS logic circuits; electromagnetic interference; integrated circuit noise; oscillators; switching circuits; wear; CMOS ring oscillator; NBTI wearout; negative bias temperature instability; pFET; ring oscillator switching noise; CMOS integrated circuits; Electromagnetic compatibility; Fluctuations; Noise; Ring oscillators; Stress; Switching circuits; CMOS circuits; EMC prediction; NBTI; Switching Noise;
Conference_Titel :
EMC Europe 2011 York
Conference_Location :
York
Print_ISBN :
978-1-4577-1709-3
