Title :
The influence of the ambient and junction temperature on the MPS critical parameters
Author :
Hapka, Aneta ; Janke, Wlodzimierz
Author_Institution :
Koszalin Univ. of Technol., Koszalin, Poland
Abstract :
The measurements and simulations of isothermal and non-isothermal DC characteristics of SiC Schottky barrier diodes are presented in this paper. Various electro-thermal models for I-V characteristics calculation are proposed. The calculations of non-isothermal characteristics of SiC SBD´s in the wide range of forward voltage are shown. The self-heating phenomenon, as an electro thermal positive feedback is discussed. The critical current and junction temperature estimation for SiC SBD is explained.
Keywords :
Schottky barriers; Schottky diodes; circuit feedback; silicon compounds; wide band gap semiconductors; I-V characteristics calculation; MPS diodes; Schottky barrier diodes; SiC; ambient temperature; critical current estimation; electrothermal models; electrothermal positive feedback; forward voltage; isothermal DC characteristics; junction temperature estimation; nonisothermal DC characteristics; self-heating phenomenon; the MPS critical parameters; Junctions; Schottky diodes; Silicon carbide; Temperature; Thermal resistance;
Conference_Titel :
Thermal Investigations of ICs and Systems (THERMINIC), 2011 17th International Workshop on
Conference_Location :
Paris
Print_ISBN :
978-1-4577-0778-0
