Title :
Self-heating effects in nano-scaled MOSFETs and thermal aware compact models
Author :
Burenkov, Alex ; Lorenz, Jürgen
Author_Institution :
Fraunhofer Inst. for Integrated Syst. & Device Technol., Erlangen, Germany
Abstract :
Self-heating of MOSFETs scaled according to ITRS specifications for the years 2010 to 2019 is investigated using numerical TCAD simulations. The local warming-up due to self-heating in SOI based transistors can exceed 100 K and must be considered in IC design. For this purpose, compact models (BSIM3SOI and BSIM4SOI) accounting for self-heating effect were extracted for SOI-MOSFETs from the results of numerical TCAD simulations.
Keywords :
MOSFET; nanoelectronics; numerical analysis; semiconductor device models; silicon-on-insulator; thermal analysis; BSIM3SOI; BSIM4SOI; IC design; ITRS specifications; SOI based transistors; SOI-MOSFET; nanoscaled MOSFET; numerical TCAD simulations; self-heating effects; thermal aware compact models; Integrated circuit modeling; MOSFETs; Numerical models; Semiconductor device modeling; Silicon; Temperature;
Conference_Titel :
Thermal Investigations of ICs and Systems (THERMINIC), 2011 17th International Workshop on
Conference_Location :
Paris
Print_ISBN :
978-1-4577-0778-0
