Title :
High temperature calibration of a compact model for GaN-on-Si power switches
Author :
Stoffels, Steve ; Marcon, Denis ; Geens, Karen ; Kang, Xuanwu ; Van Der Plas, Geert ; Van Hove, Marleen ; Decoutere, Stefaan
Author_Institution :
Imec Leuven, Leuven, Belgium
Abstract :
In this paper a modified form of the Angelov model will be introduced (for Ids), suited for GaN-on-Si power switches. The temperature dependence of the model parameters were determined up to a temperature of 280°C. The model and measurements exhibited a good agreement over the entire temperature range.
Keywords :
III-V semiconductors; calibration; elemental semiconductors; gallium compounds; power semiconductor switches; semiconductor device models; silicon; wide band gap semiconductors; Angelov model; GaN-Si; GaN-on-Si power switches; high temperature calibration; temperature dependent model parameters; Current measurement; Gallium nitride; Integrated circuit modeling; Pulse measurements; Temperature dependence; Temperature measurement; Transconductance;
Conference_Titel :
Thermal Investigations of ICs and Systems (THERMINIC), 2011 17th International Workshop on
Conference_Location :
Paris
Print_ISBN :
978-1-4577-0778-0
