DocumentCode
556819
Title
An analysis of the modeling accuracy of the GaAs MESFET models for telecommunication power amplifier design
Author
Chien, Calvin
Author_Institution
Santa Clara Univ., Santa Clara, CA, USA
fYear
2011
fDate
5-6 Sept. 2011
Firstpage
1
Lastpage
12
Abstract
A collection of slides about analysis of the modeling accuracy of the GaAs MESFET models for telecommunication power amplifier design is presented.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; integrated circuit design; power amplifiers; semiconductor device models; GaAs; MESFET models; telecommunication power amplifier design; Analytical models; Collaboration; Communications technology; Educational institutions; Joints; MESFETs; Manufacturing;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing (ISSM) and e-Manufacturing and Design Collaboration Symposium (eMDC), 2011 International Symposium on
Conference_Location
Hsinchu
ISSN
1523-553X
Print_ISBN
978-1-4577-1647-8
Type
conf
Filename
6086046
Link To Document