Title :
Analysis of 20-nm particles on Si surfaces by combination of intensified light-scattering and SEM/EDX
Author_Institution :
Tokyo Electron Ltd., Tokyo, Japan
Abstract :
A collection of slides about analysis of 20-nm particles on Si surfaces by combination of intensified light-scattering and SEM/EDX is presented.
Keywords :
X-ray chemical analysis; elemental semiconductors; light scattering; nanoparticles; scanning electron microscopy; silicon; EDX; SEM; Si; light-scattering; size 20 nm; Collaboration; Films; Joints; Light scattering; Manufacturing; Silicon;
Conference_Titel :
Semiconductor Manufacturing (ISSM) and e-Manufacturing and Design Collaboration Symposium (eMDC), 2011 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-1647-8
