• DocumentCode
    556823
  • Title

    Analysis of 20-nm particles on Si surfaces by combination of intensified light-scattering and SEM/EDX

  • Author

    Fujihara, Kaoru

  • Author_Institution
    Tokyo Electron Ltd., Tokyo, Japan
  • fYear
    2011
  • fDate
    5-6 Sept. 2011
  • Firstpage
    1
  • Lastpage
    10
  • Abstract
    A collection of slides about analysis of 20-nm particles on Si surfaces by combination of intensified light-scattering and SEM/EDX is presented.
  • Keywords
    X-ray chemical analysis; elemental semiconductors; light scattering; nanoparticles; scanning electron microscopy; silicon; EDX; SEM; Si; light-scattering; size 20 nm; Collaboration; Films; Joints; Light scattering; Manufacturing; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing (ISSM) and e-Manufacturing and Design Collaboration Symposium (eMDC), 2011 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1523-553X
  • Print_ISBN
    978-1-4577-1647-8
  • Type

    conf

  • Filename
    6086050