DocumentCode
556823
Title
Analysis of 20-nm particles on Si surfaces by combination of intensified light-scattering and SEM/EDX
Author
Fujihara, Kaoru
Author_Institution
Tokyo Electron Ltd., Tokyo, Japan
fYear
2011
fDate
5-6 Sept. 2011
Firstpage
1
Lastpage
10
Abstract
A collection of slides about analysis of 20-nm particles on Si surfaces by combination of intensified light-scattering and SEM/EDX is presented.
Keywords
X-ray chemical analysis; elemental semiconductors; light scattering; nanoparticles; scanning electron microscopy; silicon; EDX; SEM; Si; light-scattering; size 20 nm; Collaboration; Films; Joints; Light scattering; Manufacturing; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing (ISSM) and e-Manufacturing and Design Collaboration Symposium (eMDC), 2011 International Symposium on
Conference_Location
Hsinchu
ISSN
1523-553X
Print_ISBN
978-1-4577-1647-8
Type
conf
Filename
6086050
Link To Document